advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -30v simple drive requirement r ds(on) 14m fast switching characteristic i d -50a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 2.3 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice 200115041 AP4407S/p rating -30 25 -50 0.4 54 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v -32 pulsed drain current 1 180 parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 linear derating factor thermal data g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-263(s) g d s to-220(p) the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap4407p) are available for low-profile applications.
AP4407S/p electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.01 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-24a - - 14 m v gs =-4.5v, i d =-16a - - 23 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-24a - 36 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 25v - - na q g total gate charge 2 i d =-24a - 35 60 nc q gs gate-source charge v ds =-24v - 5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 26 - nc t d(on) turn-on delay time 2 v ds =-15v - 11 - ns t r rise time i d =-24a - 64 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 63 - ns t f fall time r d =0.63 - 100 - ns c iss input capacitance v gs =0v - 2120 3390 pf c oss output capacitance v ds =-25v - 630 - pf c rss reverse transfer capacitance f=1.0mhz - 550 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-24a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-24a, v gs =0v, - 39 - ns q rr reverse recovery charge di/dt=-100a/s - 38 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 100
AP4407S/p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 50 100 150 200 250 012345678 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 10 15 20 25 357911 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -16 a t c =25 0 50 100 150 012345678 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -8.0v -6.0v -4.5v v g =-3.0v t c =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-24a v g =-10v 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v)
AP4407S/p fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 14 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 24 a v ds = -24v 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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